Nondestructive Inspection of Gallium Phosphide Surface
Keywords:
gallium phosphide, irradiation, radiation defect, atomic force microscopeAbstract
Radiative recombination of gallium phosphide as the material of modern optoelectronics is sensitive to the surface state, which in tern is strongly dependent on internal action. GaP-based devices operate often in the fields of ionizing radiation, therefore it appears actual studding the changes of GaP microrelief after treatment. In work the attempt is made to trace the appearing of surface defects of crystals irradiated by accelerated particles: electrons, protons and alpha-particles. Atomic force microscope (AFM) was used to analyze the surface morphology. It was discovered conical nanohills on the surface of irradiated crystal, and the form and size of them depend on the particle mass and energy. The maximal density of such creations was observed in samples with high concentration of point defects (electrons). Specific relief might be formed by the diffusion of the simple defects and their accumulation in near surface region
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